| 摘要 |
PURPOSE:To prevent electrostatic breakdown from generation by connecting a room temperature superconductor between the gate and the source of a power MOSFET, and placing a heater warming the room temperature superconductor at a location close to the room temperature superconductor. CONSTITUTION:Since the room temperature superconductor 9 connecting to the gate 4 and the source 2 of the power MOSFET 10 has a zero electric resistance at all times at room temperature, even if a high level static electricity is applied to the gate 4, it cannot exceed the breakdown voltage of the input capacitance of the power MOSFET 10. Moreover, a DC power supply 11 is connected to input terminals 7, 8 of a heater 6 and when the room temperature superconductor 9 is heated to a critical temperature of superconduction by supplying a current to the heater 6, the resistance of the room temperature superconductor is restored to a value corresponding to the input impedance of the power MOSFET 10, the circuit is acted normally. Thus, the breakdown of an oxide film and a semiconductor element due to static electricity is not caused and the handling is simplified. |
