| 摘要 |
PURPOSE:To attain high speed operation with a small mask occupied area by using a bipolar transistor(TR) having a small mask occupied area and a high current driving capability as an output load driver and using also a comparatively small MOS TR to guarantee an output 'L' level standard. CONSTITUTION:A circuit 101 is added and a gate width of an N-channel MOS TR M11 is selected to be 1/4 of a conventional gate width or below. An 'H' level driver is an NPN bipolar TR Q11, while an 'L' level driver is an NPN bipolar TR Q12. The N-channel MOS TR M11 acts like guaranteeing the standard of output 'L' level 0.4V. Thus, the mask occupied area is decreased, and the high speed operation is attained. |
