| 摘要 |
1. A charge transfer device comprising a doped semiconductor substrate (1), one face (10) of which is covered with an insulating material (2), at least two lower electrodes (3, 3') disposed on said insulated face and separated by an interspace (5) and coated with an insulating material (4, 4'), at least one upper electrode (6) covering a first portion (51) of the interspace (5) and a portion of one of said lower electrodes (3'), as well as an element (9) made of conducting material (8), which forms an integral part of the upper electrode (6) and covers the second portion (52) of the interspace (5) between the upper electrode and the insulation of the other one (3) of said lower electrodes.
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