发明名称 |
PROCESS FOR FABRICATING A SOI TYPE SEMICONDUCTOR DEVICE |
摘要 |
<p>A process for fabricating a substrate having a dielectrically isolated region, using energy beam recrystallization. An island of polysilicon is formed on an insulating substrate and a cap containing a dopant is coated on the entire surface of the substrate. A laser beam is irradiated through the cap, and the polysilicon is recrystallized to form a doped first single crystal silicon layer. A second single crystal silicon layer is grown over the first single crystal layer. The first single crystal layer is used as a buried layer, and a semiconductor device is fabricated in the second single crystal layer. This process avoids the existence of crystal imperfections at the boundaries of the single crystal layers.</p> |
申请公布号 |
EP0145415(B1) |
申请公布日期 |
1990.04.25 |
申请号 |
EP19840308284 |
申请日期 |
1984.11.29 |
申请人 |
FUJITSU LIMITED |
发明人 |
TAKAOKA, MATSUO C/O FUJITSU LIMITED;SASAKI, NOBUO C/O FUJITSU LIMITED;KAWAMURA, SEIICHIRO C/O FUJITSU LIMITED;HATAISHI, OSAMU C/O FUJITSU LIMITED |
分类号 |
H01L27/00;H01L21/20;H01L21/268;H01L21/3215;H01L21/74;H01L21/762;H01L21/86 |
主分类号 |
H01L27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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