| 摘要 |
PURPOSE: To align an emitter and a collector contact, with respect to a base contact by forming an island connecting a base layer to a contact layer and the base contact, with a germanium layer and a silica layer as a mask, and forming the emitter and the collector contact with a newly-formed silica layer as a mask. CONSTITUTION: A Ge layer 50 and a silica layer 60 are deposited, and a mask MK2 for defining an opening 61 vertical with respect to a base contact region is deposited. The silica layer 60 is etched, and the Ge layer 50 is etched, to form an opening 51. Next, to form an island 30 for connecting a base layer 31 to the contact layer, ions of second conductive type are partially injected, and a metal layer 70 appropriate for forming a base contact B is deposited. Then, the silica layer 60 is selectively etched. Next, a new silica layer 80 is formed and smoothed on upper level of the Ge layer 50, and then the Ge layer 50 is etched selectively. Then, a metal layer 90 which is appropriate for forming an emitter E and a collector contact C is formed, with the pads of a new silica layer 80 as a mask. Next, the pads of a new silica layer 80 are removed.
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