| 摘要 |
<p>PURPOSE:To effectively protect a thick film against oxidation by a protective film so as to eliminate defects caused by oxidation by a method wherein a Ga1-xAlxAs protective film small in a mixed crystal ratio x of Al is made to grow on a GaAlAs thick film. CONSTITUTION:A p-type Ga0.2Al0.8 thick film layer 3 is deposited on a GaAs crystal substrate 2, and a Ga1-xAlxAs protective film 4 is deposited on the thick film layer 3. The thick film layer 3 is coated with the Ga1-xAlxAs protective film whose mixed crystal ratio x of Al is small (x<0.3) to be effectively restrained from being oxidized. And, Al more than 0.05 in a ratio is mixed into the protective film 4, whereby the deviation from the phase equilibrium between the thick film 3 of solid phase and a second crystal growth solution of liquid phase is restrained to be small when the protective film 4 is grown on the thick film layer 3. Next, a p-type GaAlAs clad layer 5, a GaAlAs active layer, and an n-type GaAlAs clad layer 7 are deposited on the thick film layer 3, and the p-type GaAs crystal substrate 2 is removed to improve an external light emitting efficiency, and thus a light emitting semiconductor element 9 can be obtained.</p> |
