| 摘要 |
PURPOSE:To restrict reduction of a transparent electrode and obtain an improved interface characteristics of transparent electrode/p layer by providing a glass substrate, a transparent electrode, a p-layer, an i-layer, an n-layer, and a metal electrode and inserting a thin-film metal layer or a metal silicide layer between the transparent electrode and an amorphous layer. CONSTITUTION:A glass substrate 1, a transparent electrode 2, a p-layer 4, an i-layer 5, an n-layer 6, and a metal electrode 7 are provided and at the same time a thin-film metal layer 3 or a metal silicide layer is inserted between the transparent electrode 2 and the amorphous layer. Namely, after forming the extremely thin metal layer 3 on the transparent electrode 2, the p-layer 4, the i-layer 5, and the n-layer 6 are formed in sequence, thus preventing the transparent electrode 2 from directly contacting hydrogen plasma. Thus, reduction of the transparent electrode 2 is restricted and diffusion mixture of metal impurities such as indium and tin can be reduced. |
