发明名称 MAGNETO-RESISTANCE EFFECT TYPE THIN FILM HEAD
摘要 PURPOSE:To reduce the deterioration in the characteristic of an MR element due to heat and to reduce the variance in the magnetic characteristic of both the MR elements and the variance in the shape by widening the interval between the two magneto-resistance effect type elements (MR) with an intermediate insulation layer inbetween more than the interval between each of the MR elements and the shield magnetic member. CONSTITUTION:The two MR elements 14,15 in a thickness of 0.05mum made of Ni-Fe film with an intermediate insulation layer 22 in the film thickness of 0.08mum made of SiO2 or an insulating resin member inbetween via, e.g., an insulation layer 21 whose film thickness is 0.05mum made of SiO2, AL2O3 are arranged to a gap (1mum) between a soft magnetic base 11 and a shield soft magnetic member 12. That is, the structure is adopted such that a distance D1 between both the MR elements 14,15 is widened nearly ten and several times wider than a distance D2 between the soft magnetic base 11 and the shield soft magnetic member 12 opposite respectively to the MR elements 14,15. Thus, the cooling efficiency of each MR elements easily heated is enhanced and the deterioration in the magnetic characteristic is reduced and the variance in the film thickness, the shape and the magnetic characteristic of both the MR elements is avoided.
申请公布号 JPH02110810(A) 申请公布日期 1990.04.24
申请号 JP19880263391 申请日期 1988.10.18
申请人 FUJITSU LTD 发明人 KOSHIKAWA YOSHIO;MIURA YOSHIMASA
分类号 G11B5/39 主分类号 G11B5/39
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