发明名称 |
CMOS having buried layer for carrier recombination |
摘要 |
In order to improve latchup withstanding capability, a CMOS device is provided with at least one recombination layer which is buried in either or both substrate regions of a pMOS and a nMOS at such a position that a depletion layer formed at a pn junction between both substrate regions of the pMOS and nMOS does not reach the recombination layer. The recombination layer is a polycrystalline silicon or amorphous silicon layer having plentiful carrier recombination centers, or a layer having plentiful traps formed by ion implantation, or a layer of a compound semiconductor having a small band gap.
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申请公布号 |
US4920396(A) |
申请公布日期 |
1990.04.24 |
申请号 |
US19880179315 |
申请日期 |
1988.04.08 |
申请人 |
NISSAN MOTOR COMPANY, LIMITED |
发明人 |
SHINOHARA, TOSHIRO;MIHARA, TERUYOSHI;YAO, KENJI |
分类号 |
H01L27/08;H01L21/18;H01L27/092 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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