| 摘要 |
The sensitivity of a photodiode, which has a semiconductor substrate of first conductivity, an island region of an epitaxial layer of oppposite second conductivity formed on the substrate, a diffused region of the first conductivity formed in the epitaxial layer through its entire thickness so as to define the island region and a diffused region of the second conductivity formed in a surface region of a marginal area of the island region, is enhanced by forming a shallow laminar region of the first conductivity in the surface of a major area of the island region by ion implantation. The photodiode of improved sensitivity can be integrated with simplified circuit components to provide a single-chip photodetecting or photosensitive device by a conventional bipolar process.
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