| 摘要 |
PURPOSE:To improve a high-frequency characteristic and a forward characteristic by providing a deep groove on one conductivity type conductor substrate, an opposite conductivity type semiconductor region formed in this groove and a Schottky barrier electrode formed on the semiconductor region and the semiconductor substrate. CONSTITUTION:A deep guard ring groove 3 is selectively formed on an n-type epitaxial growth layer 2 on an n-type semiconductor substrate 1, and inside this guard ring 3, impurities are selectively diffused to form a p-type guard ring region 4. Next, a Schottky barrier electrode 6 is formed on an epitaxial growth layer 2 surrounded by the guard ring region 4 and the guard ring grove 3. Since the guard ring region 4 is formed inside the deep guard ring groove 3 like this, a shallow diffusion process is sufficient. Accordingly, a smaller amount of impurities are diffused from the substrate 1 in the epitaxial growth layer 2 at the time of forming the guard ring region 4 so that the effective length of the epitaxial growth layer 2 is lengthened. Thereby, a high-frequency characteristic and a forward characteristic are improved. |
