发明名称 |
Process for fabricating a high-speed CMOS TTL semiconductor device |
摘要 |
A process for fabricating a high-speed CMOS TTL semiconductor device, wherein the operational speed of a semiconductor device is controlled by adjusting the capacitance of its field region. The capacitance of the field region is adjusted by the thickness thereof, which is determined by the control of diffusion heating cycles in the fabrication sequence according to the invention.
|
申请公布号 |
US4920066(A) |
申请公布日期 |
1990.04.24 |
申请号 |
US19880292106 |
申请日期 |
1988.12.30 |
申请人 |
SAMSUNG ELECTRONIC CO. LTD. |
发明人 |
HONG, PIL-YOUNG;OH, TAE-YUP;KIM, CHUN-JOONG;KANG, SANG-SUK |
分类号 |
H01L27/10;H01L21/762;H01L21/8238;H01L27/092 |
主分类号 |
H01L27/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|