发明名称 Method of forming metal interconnects
摘要 Metal interconnects and method for forming same such that an intermediately formed aluminum layer provides an etch stop and etch mask during the tungsten etch back. The method may be used to form tungsten contacts without requiring pre-metal planarization of the semiconductor body.
申请公布号 US4920072(A) 申请公布日期 1990.04.24
申请号 US19880265157 申请日期 1988.10.31
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 KELLER, STEPHEN A.;SPRY, PIPER A.;ADAMS, MARTHA S.;HARPER, RALPH G.
分类号 H01L21/768;H01L23/532 主分类号 H01L21/768
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