Metal interconnects and method for forming same such that an intermediately formed aluminum layer provides an etch stop and etch mask during the tungsten etch back. The method may be used to form tungsten contacts without requiring pre-metal planarization of the semiconductor body.
申请公布号
US4920072(A)
申请公布日期
1990.04.24
申请号
US19880265157
申请日期
1988.10.31
申请人
TEXAS INSTRUMENTS INCORPORATED
发明人
KELLER, STEPHEN A.;SPRY, PIPER A.;ADAMS, MARTHA S.;HARPER, RALPH G.