| 摘要 |
<p>PURPOSE:To make it possible to obtain a sufficient heat dissipation effect without applying a local excessive pressure welding force and stress to a semiconductor pellet as well as to make it possible to relax a current concentration at pressure welding end parts and to obtain the title device having a high overcurrent withstand voltage by a method wherein the device is constituted in such a way that one main surface of an electrode member covers the whole surface of a region, through where a current is made to flow, of the pellet and the other main surface of the electrode member covers the whole surface of an electrode post and the like. CONSTITUTION:The opposed surfaces of a main electrode (cathode) 22k, an electrode member 24k and a cathode electrode post 23k on the side of the first main surface of a semiconductor pellet 21 and the opposed surfaces of a main electrode (anode) 22a, an electrode member 24a and an anode electrode post 23a on the side of the second main surface of the pellet 21 come into contact to one another and are pressed without being fixed to one another, the main surfaces on one side of the members 24k and 24a cover the whole surfaces, which oppose to the main surfaces of the members 24k and 24a, of regions, through where a current is substantially made to flow, of the pellet 21 and the other main surfaces of the members 24k and 24a cover the whole surfaces, which oppose to the other main surfaces of the members 24k and 24a, of the posts 23k and 23a and, moreover, the respective members 24k and 24a and the respective posts 23k and 23a, which are pressure-welded to the members 24k and 24a, are provided so as to have mutual positioning guides 31k and 31a. For example, the above member 24k is formed into a laminated structure consisting of a soft metallic thin plate 24n and an electrode plate 24m which consists of W or Mo and the like and is superposed on the thin plate 24n.</p> |
