发明名称 |
PRODUCING DEVICE OF CUBIC BORON NITRIDE FILM |
摘要 |
PURPOSE:To obtain a cubic boron nitride film which is rigid and has high thermal conductivity and high electrical insulating properties by introducing a gaseous mixture of nitrogen and rare gas into a reaction chamber and generating electronic cyclotron resonant plasma and also impressing bias voltage on a base material while performing vapor deposition on the base material. CONSTITUTION:The inside of a reaction chamber 1 is preliminarily exhausted and a gaseous mixture of nitrogen or a compd. contg. nitrogen and rare gas is introduced into a plasma generating chamber 9 and the pressure of the inner part is maintained at the prescribed pressure. A magnetic field is impressed to the inside of the chamber 9 by a coil 10 for impressing the magnetic field and microwave is introduced via a waveguide 12. Electron cyclotron resonance plasma is generated and vapor deposition of boron is performed on a base material 3. High-frequency electric power is impressed on a base plate holder 4 from a high-frequency power source 8 to generate self-bias and a CBN film 16 is formed on the base material 3. |
申请公布号 |
JPH02111882(A) |
申请公布日期 |
1990.04.24 |
申请号 |
JP19880264108 |
申请日期 |
1988.09.21 |
申请人 |
MITSUBISHI HEAVY IND LTD |
发明人 |
YAMASHITA NOBUKI;WADA TETSUYOSHI |
分类号 |
C23C16/34;C23C14/06;C23C14/22;C23C16/50;C23C16/511 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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