| 摘要 |
PURPOSE:To reduce the number of outer parts by forming an n<+> type semiconductor region in honeycomb structure in a p<+> type semiconductor substrate which becomes a collector region and by making the n<+> type semiconductor region and the p<+> type semiconductor region in a structure shortcircuited by a collector electrode. CONSTITUTION:An n<+> type semiconductor region 1200, an n<+> type buffer layer 200, and an n<-> type semiconductor region 300 are the same conductivity type layer. Therefore, an electric potential applied to a collector electrode 1100 is supplied to the n<-> type semiconductor region 300 through the n<+> type semiconductor region 1200 and the n<+> type buffer layer 200. An electric potential applied to an emitter electrode 900 is supplied directly to a p<+> type semiconductor region 700. As a result, a p-n junction diode DIO is formed by the p<+> type semiconductor region 700 and the n<-> type semiconductor region 300. The p-n junction diode DIO works as a commutating diode. A number of n<+> type semiconductor regions 1200 are arranged between p<+> type semiconductor regions 100 in a net or honeycomb structure. Due to such a structure, a p-n junction diode is built in between the collector electrode 1100 and the emitter electrode 900. Since a commutating diode can be thereby built in between a collector and an emitter, an outer commutating diode becomes unnecessary. |
