| 摘要 |
PURPOSE:To enhance the accuracy of alignment made by the method using a scale-down projection aligner, which performs alignment with single-wave light, by previously removing only the resist in the aligning area on a wafer. CONSTITUTION:A front layer pattern 25 and an alignment mark 26 are provided on a wafer 24, and it is coated with a pos. type resist 27. Then this wafer 24 is placed on a wafer chuck 23, and a mask 21 provided with a pre-exposure window is overlapped on the wafer 24, and ultraviolet rays are directed in a lump through this window solely so as to expose the mark 26 to the light. This is followed by development to remove the resist, and the mark 26 is exposed. Then a stepper makes alignment exposure, which achieves overlapping with high alignment accuracy. |
