| 摘要 |
PURPOSE:To reduce the manufacturing steps by making a metal film as a light shielding film, and removing it partially for forming a source drain electrode. CONSTITUTION:A gate insulation film 30 and amorphous semiconductor layer 40 are formed on an insulation substrate 1, and a metal film is formed on this layer 40. This metal layer is partially removed to form a source drain electrode 80, while the remaining part is made as a light shielding layer 90. The electrode 80 and the layer 90 are formed by one step in this way, and thus the manufacturing steps of a thin film transistor with the light shielding layer for preventing an incident light are reduced. |
