| 摘要 |
PURPOSE:To obtain a high-sensitivity bidirectional thyristor of low temperature dependency of a gate trigger current by forming a specific island intrusion part in a third semiconductor and connecting a first main electrode to a gate electrode through a specific resistor. CONSTITUTION:A gate trigger current IGT separates into two flows and flows into a third semiconductor area P2 including an intrusion part 8 and a resistor 12. The resistivity of the area P2 and that of the resistor have inverse tempera ture characteristic to each other. Therefore, the current IGTa flowing into the area P decreases as the temperature rises and the current IGTb flowing into the resistor 12 increases as the temperature rises. Thereby the temperature dependency of the currents compensates with each other to reduce the tempera ture dependency of the current IGT. The resistor 12 has comparatively large resistance to decrease the current IGTb. The current IGTb mainly flows into the area P2 under a fifth semiconductor area n4 by forming a part 8, and therefore, effectively works on a trigger. Therefore, the current IGT becomes comparatively small and a high-sensitivity bidirectional thyristor can be obtained. |
