| 摘要 |
PURPOSE:To make the area of a storage cell smaller, than an X cell type ROM by approximately thirty % by forming a third wiring crossing first or second wirings through an insulating film and connected to a diffusion layer. CONSTITUTION:First wirings (gate lines) 1a are made to meander and wired on element isolation insulating films 5 and gate insulating films 9, field oxide films 10a are deposited onto n<+> diffusion layers 6 except channel sections and the element isolation insulating films 5, and second wirings (gate lines) 1b are deposited and made to meander and wired. Consequently, the gate lines 1a and 1b are formed onto the element isolation insulating films 5 in patterns coinciding to a plane shape, and shaped as two different layers in three dimensions. Output lines 2 and ground lines 3 as third wirings (row lines) are connected to the n<+> diffusion layers 6 in source/drain regions through contacts 7. According to the constitution, the length of (m) is made shorter than a conven tional system by approximately one third in the area S=mXl of a unit storage cell, thus forming a storage device a cell area of which is reduced by 30%. |
