| 摘要 |
PURPOSE:To reduce a parasitic impedance caused by a lead line by providing a semiconductor chip, of which the electrode is mounted so as to be exactly or approximately on the same plane as the electrode part of a ground conductor, at the recessed part of the ground conductor. CONSTITUTION:A pedestal 3a of the ground conductor has the recessed part, which is provided so that the top-face electrode parts of the pedestal 3a and an FET chip 4 may be the same or approximately the same plane. Consequently, the length of a bonding wire 7 to connect between the source electrode part of the FET chip 4 and the electrode part of the pedestal 3a can be reduced. When the height dimension of the drain/gate electrode part of the FET chip 4 is the same or approximately the same as the height dimension of a microstrip line 6 of input/output side dielectric substrates 2a and 2b, the length of the bonding wire 7 to connect between them can be made shorter. Thus, the parasitic impedance caused by the lead line can be suppressed to a small value, and the stable high frequency characteristic can be obtained. |
