| 摘要 |
<p>PURPOSE:To prevent the generation of a crack in a semiconductor substrate by forming a pad layer having size larger than an electrode and thermal conductivity larger than an insulating film coating the semiconductor substrate between the semiconductor substrate and the electrode. CONSTITUTION:The thermal conductivity of polycrystalline silicon constituting a pad layer 12 is 3.58X10<-11>Cal/musec.mum. deg.C while the thermal conductivity of a silicon oxide film organizing an insulating film 13 is 0.033X10<-11>Cal/musec.mum. deg.C. The pad layer 12 larger than an aluminum electrode 14 is shaped between an aluminum electrode 14 and a semiconductor substrate 11, and the thermal conductivity of the pad layer 12 is made extremely larger than the insulating film 13, thus dissipating heat applied to a bump 17 to the semiconductor substrate 11 through the pad layer 12 without being transmitted to the insulating film 13 even when heat is applied to the bump 17 when an outer lead is connected to the bump 17. Consequently, thermal stress load at the time of the connection of the outer lead can be relaxed. Accordingly, the generation of a crack in the semiconductor substrate 11 can be prevented.</p> |
