SEMICONDUCTEUR DEVICE

摘要

A semiconductor device comprises a semiconductor substrate formed of a single-element semiconductor; a buffer layer formed of a semiconductor compound having a grating constant different from that of the single-element semiconductor; an operating layer piled on the buffer layer and formed of the same semiconductor compound forming the buffer layer, the operating layer functioning as a semiconductor element; and a barrier layer for forming a potential barrier against the operating layer in such a manner as to restrict the flow of current from the operating layer to the semiconductor substrate, characterized in that the Hall electromotive force obtained thereby is sufficient to favorably maintain the movement of a carrier as a Hall element when it is used as the Hall element and simultaneously to restrict the flow of leakage current to the substrate.