Semiconductor devices manufacture using selective epitaxial growth and poly-Si deposition in the same apparatus.
摘要
<p>A semiconductor device and its manufacturing method are provided in which an epitaxial silicon layer (5) is formed by a selective epitaxial growth method over a semiconductor substrate (1) and a polysilicon layer (6) is formed by an ordinary deposition method on the epitaxial silicon layer (5) and these layers (5) and (6) are formed over a semiconductor device in a continuous process within the same furnace for a CVD apparatus.</p>
