| 摘要 |
PURPOSE:To prevent a gap from being produced between an electrode and a resin by a method wherein a close-contact reinforcement part is formed around the electrode of a semiconductor chip and the part is stuck closely to the resin sealing the semiconductor chip. CONSTITUTION:An Ni oxide film 7 is formed so as to surround an Al electrode 3 on an insulating film 2; it is used as a close-contact reinforcement part. When they are sealed with an epoxy resin 6, the Ni oxide film 7 and the epoxy a resin 6 are closely contacted firmly; accordingly, even when a thermal shock is exerted on this semiconductor device, a gap is hard to cause at a boundary part between the Al electrode 3 and the epoxy resin 6. As a result, it is possible to prevent the Al electrode 3 from being corroded by permeation of water; reliability of the semiconductor device is enhanced. |
