| 摘要 |
<p>PURPOSE:To solve a problem of a temperature distribution on a thin-film substrate and to enhance a uniformity of an etching speed by a method wherein heat generated by a dry-etching operation on the thin-film substrate supported on a hollow part is dissipated while a good heat-conducting member is approached. CONSTITUTION:A silicon wafer is used as a support frame 5; a boron nitide or silicon nitride film is formed as a thin-film substrate 4; after that, a mask blank is manufactured. A layer 3 to be treated is laminated; it is coated with a resist layer 2; a pattern is formed. Then, a silicon or copper block as a good heat-conducting member 7 is arranged in such a way that a gap between the member and the thin-film substrate 4 is 10mum or lower. A uniform distribution of an etching speed can be obtained even on the thin-film substrate on the support frame.</p> |
