| 摘要 |
PURPOSE:To eliminate dust adhered to the rear surface of a wafer on ion impregnation and reduce smear of a heat treating furnace or the wafer itself by grinding silicon on the rear surface of the wafer after ion impregnation. CONSTITUTION:With a member for cooling a semiconductor substrate 1 being adhered to the rear surface of the semiconductor substrate 1, impurities are introduced into the main surface of the semiconductor substrate 1 selectively and the member for cooling is eliminated and then the rear surface of the semiconductor substrate 1 which is in contact with the member for cooling is ground. It completely eliminates organic substances 4a-4c adhered to the rear surface of the wafer 1 on ion impregnation, reduces smear of a heat treating furnace for forming diffusion layer, and improves characteristics and yield of a MOS device.
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