Plasma etching apparatus.

摘要

A plasma etching apparatus comprising a treatment chamber (8) capable of being evacuated, an electrode structure comprising first and second electrodes (4 and 6) which face each other in the treatment chamber and a gas introducing means (2) provided in connection with the first electrode, and a radiofrequency power source (7) connected to the electrode structure for supplying radiofrequency electric power to a space between the gas introducing means and the second electrode. The gas introducing means comprises a graphite panel (22) having a silicide layer (23) formed at least on the surface of graphite facing the second electrode and has a large number of through-holes (3) for passing therethrough a gas fed to a space between the first electrode and the introducing means into the space between the gas introducing means and the second electrode.