| 摘要 |
<p>PURPOSE:To prevent the fluctuation of ON current of an insulated gate type transistor and the disconnection of a metal layer wiring, and simplify a manufacturing process by forming a source.drain by selective doping of impurity into an amorphous silicon layer which does not contain impurity turning to a channel. CONSTITUTION:A pair of second metal layers are selectively spread and formed on an island type amorphous silicon layer 30 and a first insulating layer 16, so as to overlap a part of a first metal layer 9. Said second metal layers constitute source.drain wirings 23, 24. Impurity which is doped, in a self alignment manner, in the island type amorphous silicon layer 30 except a region under a second insulating layer 19 reaches an interface to the first insulating layer. Thereby, the fluctuation of ON current of an insulated gate type transistor and the disconnection of metal layer wiring are prevented, and a manufacturing process is simplified.</p> |
