发明名称 STORE SIGNAL CONTROL CIRCUIT FOR NONVOLATILE RAM
摘要 <p>PURPOSE:To reduce the possibility that a STORE signal is outputted in error even in the case of a CPU runaway by generating a store signal according to the output of a signal selecting circuit which selects an address signal and a data signal of a microcomputer optionally in combination. CONSTITUTION:A STORE signal control circuit 8 for a nonvolatile RAM (NVRAM) is equipped with the signal selecting circuit 4 which selects an address signal and a data signal of the CPU optionally in combination and generates the STORE signal according to the output of this signal selecting circuit 4. The signal selecting circuit 4 selects the specific address signal and data signal of the CPU to generate the STORE signal when the CPU writes specific data in a specific address of the NVRAM. Consequently, the STORE signal is prevented from easily being generated in the case of a CPU runaway and the generation conditions of the STORE signal are easily changed.</p>
申请公布号 JPH02105952(A) 申请公布日期 1990.04.18
申请号 JP19880257248 申请日期 1988.10.14
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAKEYA HIDEKI
分类号 G06F12/16;G11C7/00;G11C16/02;G11C16/06;G11C17/00 主分类号 G06F12/16
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