发明名称 PATTERN FORMING METHOD
摘要 PURPOSE:To easily obtain a stable pattern which has a prescribed film thickness and no fault by applying a colored photoresist on a substrate with a film thickness which is fully exposed till a light reaches the rear surface of the photoresist to form a pattern 7, and then applying the color photoresist on the pattern 7 with the same film thickness to that of the pattern 7, and subsequently exposing and developing, and by repeating the step as mentioned above to obtain the pattern with a thick film thickness. CONSTITUTION:The colored photoresist 5 is applied on the substrate with the film thickness which is exposed till exposure energy fully reaches to the rear surface of the photoresist with an usual exposure to form the pattern 7. The colored photoresist 5 is applied on the pattern 7 with the same film thickness to that mentioned above, exposed and then developed. Then by repeating the step of forming a thick pattern at a several times, the pattern with a prescribed film thickness is formed. Accordingly, the film thickness of the colored resist 5 is thin, and as the photoresist is fully exposed to the rear surface of the resist, even if the exposure of the colored resist 5 is set in a region in which an aberration between the pattern 7 and a mask 6 due to the light diffraction at the time of exposing the photoresist, is small, the side etching of the photoresist due to the shortage of the polymerization of the photoresist does not generate. Thus, the pattern which does not generate the chipping and the peeling of the resist is formed with good accuracy.
申请公布号 JPH02106755(A) 申请公布日期 1990.04.18
申请号 JP19880260099 申请日期 1988.10.14
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 AKUTAGAWA RYUTARO;ASO SHINICHI;INAMI TAKASHI;TAKEGAWA HIROZO;SHIMIZU TOKIHIKO
分类号 G03F7/20;G03F7/26 主分类号 G03F7/20
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