发明名称 Static random access memory with asynchronous power-down
摘要 A static random access memory, wherein power consumption is reduced by using asynchronous edge-triggered power down gates to power up only elements in the critical circuit path for only as long as necessary to access the memory. Thus, power consumption in the memory is reduced to nearly an absolute minimum. This invention uses the address transition clock to provide an asynchronous power up function to various parts of the static RAM so that only the circuit which is propagating the signal is powered up and the power is held high just long enough for the signal to propagate. This is performed using intrinsic timing elements of the RAM critical path so that the timing of the signal and power cycles track each other.
申请公布号 US4918658(A) 申请公布日期 1990.04.17
申请号 US19830528203 申请日期 1983.08.31
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 SHAH, ASHWIN H.;CHATTERJEE, PALLAB K.
分类号 G11C11/41;G11C11/407;G11C11/413;H03K3/033;H03K5/04 主分类号 G11C11/41
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