| 摘要 |
PURPOSE:To improve yield rate of the manufacture of the beam integrating element by completely removing the discontinuity in the direction of a stripe of a mesa etching pattern and conducting burying growth extremely smoothly. CONSTITUTION:Two parallel grooves 120, 121 with 5mum width and 2mum depth are formed to a multilayer film structure semiconductor wafer, which is manufactured by laminating an n-InP buffer layer 102, an In0.72Ga0.23As0.61P0.39 active layer 103 having the composition of 1.3mum light emitting wavelength and a p-InP clad layer 104 onto a (100)n-InP substrate 101 in succession, in parallel in the <011> direction, and the mesa stripe 105 with 2mum width held by the two grooves is shaped. A p-InP current block layer 106 and an n-InP current block layer 107 are laminated except only the upper surface of the mesa stripe 105 and further a p-InP buried layer 108 and a p-In0.65Ga0.15As0.33P0.37 electrode layer 109 having the composition of 1.1mum light emitting wavelength in succession. A Zn diffusion layer 110 is shaped through the whole-surface Zn diffusion for PD up to the depth penetrating the n-InP current block layer 107 in both side sections of the grooves, and an electrode is formed. |
