| 摘要 |
A semiconductor device comprising an island of semiconductor material disposed on an insulating substrate is disclosed. A MOS transistor is formed in the semiconductor material, but the gate electrode does not extend over any sidewall of the silicon island. In order to electrically isolate the source and drain regions in the areas of the silicon island not subtended by the gate electrode, a pair of diodes in series is used to eliminate the shorting paths.
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