发明名称 Semiconductor device
摘要 Semiconductor layers having a p-n junction are formed over the surface of a semiconductor substrate except for a partial surface. On the partial surface of the semiconductor substrate, a region of an electrode to be connected with an external terminal is formed with an insulating film interposed between the same. Bonding connection with the external terminal is performed on the region for connection, to reduce mechanical damage of the semiconductor layers having the p-n junction while improving photoelectric conversion efficiency and reliability of the device.
申请公布号 US4918507(A) 申请公布日期 1990.04.17
申请号 US19880186237 申请日期 1988.04.26
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 YOSHIDA, SUSUMU
分类号 H01L31/04;H01L29/41;H01L31/0224;H01L31/068;H01L31/10 主分类号 H01L31/04
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