| 摘要 |
PURPOSE:To eliminate the leakage of an electric field and to alleviate a voltage applied an an insulating layer by providing semi-insulating polysilicon between a semiconductor substrate and the insulating layer. CONSTITUTION:Semi-insulating films 22 are deposited on the surfaces of Si substrates 20 and 21 which are machined as mirror surfaces by a pressure reduced CVD method and the like. Then, SiO2 layers 23 are deposited by the same method. Thereafter, the surfaces of the substrates 20 and 21 on which the films 22 and 23 are formed are made to face, and heating and contact bonding are performed. Thus the bonded substrates for a high breakdown- strength element is obtained. In this way, the leakage of an electric field at the semi-insulating polysilicon part is eliminated, and a voltage applied on the insulating layer is alleviated. Thus, stable high breakdown-strength separation can be performed.
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