| 摘要 |
<p>PURPOSE:To make alignment marks so legible for augmenting the alignment precision by a method wherein insulating films for alignment marks are formed on a substrate while epitaxial layers are deposited on the substrate while a polysilicon layer is deposited on the insulating layers and later the polysilicon layer on the insulating layers is removed to used the insulating layers as the alignment marks. CONSTITUTION:Insulating films 12, 22 for alignment marks are formed on a substrate 11. Next, epitaxial layers 13 are deposited on the substrate 11 by epitaxial polysilicon growth while a polysilicon layer 14 is deposited on the insulating film 12. Then, the polysilicon layer 14 on the insulating films 12, 22 is removed to use the insulating films 12, 22 as the alignment marks. Through these procedures, the marks are made so legible to augment the alignment precision.</p> |
