发明名称 MANUFACTURE OF MASK FOR PRODUCING SEMICONDUCTOR AND HARD MASK BLANK PLACING TABLE
摘要 PURPOSE:To prevent adhesion of dust, etc., due to static electricity and to prevent the occurrence of a mask defect by treating material with the potential of a resist film kept the same as the ground after the surface of a hard mask blank is exposed. CONSTITUTION:After a hard mask blank 1 is irradiated an electron beam 41, the subsequent treatment is executed with the potential of the resist film 4 kept the same as the ground. To ground a chrome film 3, an electrode 11 is brought into contact with a part exposed to the side of the hard mask blank of the film 3 being a conductor, and a conductive wire 12 is grounded to the part. Through the use of a hard mask blank placing table 21, the hard mask blank 1 is placed on the bottom 22a of a base 22, and the film 3 is pressed and held with pins 23a and 14b through the springs 24a and 24b of the table 21. Then the films 3 and 4 are grounded through the conductive wire 25 similarly. In such a way, the surface of the film 4 is not electrified; therefore the adhesion of dust, etc., is eliminated to prevent the occurrence of a mask defect. In addition, operability is improved.
申请公布号 JPH02103046(A) 申请公布日期 1990.04.16
申请号 JP19880256612 申请日期 1988.10.12
申请人 TOSHIBA CORP;TOSHIBA MICRO ELECTRON KK 发明人 SUZUKI TOSHIYUKI
分类号 G03F1/40;G03F1/68;G03F1/78;H01L21/027 主分类号 G03F1/40
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