| 摘要 |
PURPOSE: To eliminate an influence due to a single event upset by incorporating a coupling capacitor between two storage nodes in order to achieve the radiation and solidification of a circuit. CONSTITUTION: A resistance is replaced with a coupling capacitor Cc transversing nodes Q' and -Q'. And when the single event ion bombardment is assumed to exist in the storage node N1, a transition from the original logical state of '1' in a Vcc to a new logical state of '0'in an OV is generated. At the same time, the voltage on the storage node N2 is also changed due to a capacitor coupling effect and driven into a negative voltage value approaching from the OV to a -Vcc. The voltage transversing both nodes N1 and N2 is dropped in the same direction, the voltage transversing the node N1 is rapidly approached to zero, while the voltage transversing the node N2 is rapidly approached to -Vcc. By this way, since no cross-point exists in the voltage transversing the storage nodes N1 and N2, the influence due to the single event upset is eliminated. |
