NON-VOLATILE MEMORY DEVICE

摘要

PURPOSE: To reduce reading disturbance by disconnecting the drain of a floating gate tunnel capacitor from the source of a selecting transistor and always keeping a constant voltage when an element is in a sense mode. CONSTITUTION: When the element is in the sense mode, all writing data line WDL is kept in the constant voltage VWDL. The potential is transmitted to the drain 134 of the floating gate tunnel capacitor 130 via a chanel formed under a write selecting transistor 160 by holding a write selecting line in at least 1VT of the VWDL plus program selecting transistor 160. Therefore, the drain 134 of the floating gate tunnel capacitor 130 and a control gate 136 are kept in the same voltage, thereby reducing the worst net electric field crossing over to the tunnel dielectric. By this way, reading disturbance is minimized.