| 摘要 |
PURPOSE:To enable a pattern sufficient in resolution to be formed by using a resist higher in the concentration of a photosensitive group in the surface and lower in the lower part in the resist applied on one of the surfaces of a semiconductor wafer. CONSTITUTION:The diazo type photoresist 2 is applied to the semiconductor substrate 1 and the substrate 1 is baked (e) from the reverse side, preferably, at a temperature of >=90 deg.C, and cooled (d) by dry air, preferably, at a tempera ture of <=23 deg.C from the surface time, resulting in forming the layer higher in the upper part 3 in the concentration of the photosensitive group and lower in the upper part 3 in the concentration of the photosensitive group and lower in the lower part 4. This resist is exposed to ultraviolet rays l by using a size reduction projection exposure device an a reticle 4. At that time, the contrast of a latent of a reticle pattern formed in the resist pattern is enhanced as com pared to the contrast between the intensities of lights incident on the surface of the resist 2, and a resist pattern 20 is formed by developing the area exposed to light l and removing it, thus permitting the contrast in the resist pattern to be enhanced and a pattern high in resolution to be formed. |
