| 摘要 |
PURPOSE:To obtain a resist pattern superior in sensitivity and change of light transmittance and good in the form by acidifying the pattern forming material. CONSTITUTION:The pattern forming material comprises a photosensitive compound made photoreactive by exposure to lights near 248.4nm in wavelength and a resin small in the absorbance of the lights, and a solvent capable of dissolving the compounded and the resin and it is acidified. The sensitive group of the photosensitive compound in the pattern forming material, that is, a diazo group, is converted into an instable state, and promoted in photoreactivity, thus permitting the obtained pattern forming material to be enhanced in sensitivity and the change of transmittance to lights, such as KrF excimer laser beams, having wavelengths near 248.4nm by acidifying the material, and to be enhanced in sensitivity and to easily form a fine pattern of a submicron order superior in the form at the time of using the material for the resist to be exposed to the excimer laser beams or deep UV beams. |
