发明名称 METHOD FOR HEAT TREATING PHOTOSENSITIVE RESIST
摘要 PURPOSE:To facilitate temperature control of a heat conducting medium, to shorten heat treatment time, to enhance efficiency, and to enable a wafer substrate to be cleaned of dust by heat treating a photosensitive resist formed on the substrate by using an inactive fluorinated liquid as the heat treating medium. CONSTITUTION:The inert fluorinated liquid to be used as the heat treating medium is stable even at a temperature as high as 150 deg.C and nonreactive with the wafer substrate and the resist, and very high in heat conductivity, thus permitting the temperature control of the medium to be made easy, a time required for heating the resist to a temperature necessary for the treatment to be shortened, and a treatment efficiency to be enhanced, and the medium to be very high in specific gravity as compared with gases used as the heat conducting medium, and dust attached to the wafer substrate, lower in specific gravity than the fluorinated medium to float up apart from the wafer and to be easily removed.
申请公布号 JPH02101470(A) 申请公布日期 1990.04.13
申请号 JP19880255280 申请日期 1988.10.11
申请人 MITSUBISHI ELECTRIC CORP 发明人 ISHIO NORIAKI
分类号 G03F7/40;H01L21/027 主分类号 G03F7/40
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