| 摘要 |
PURPOSE:To obtain a quantum fine wire which is sufficiently quantized in width direction as well as in the thickness direction by a method wherein, after interference exposure fringes are formed on a barrier layer by using ultraviolet ray having a specified wave length, and a quantum well layer is formed only on a part of high light intensity by optical CVD method, said quantum well layer is filled with a buried layer. CONSTITUTION:On an InP substrate 1, a 1.3mum composition waveguide layer 2 500Angstrom , and an InP barrier layer 3 150Angstrom are grown by OM-VPE method. When interference fringes are formed by making ultraviolet ray whose wave length is 570Angstrom enter a wafer at an angle of 45 deg., interference fringes having a period of 400Angstrom are obtained. A part of high light intensity of the interference fringes, i.e., a 1.5mum composition InGaAsP quantum well layer 4 of 200Angstrom width is grown in thickness of 300Angstrom by optical CVD method. Next, again by OM-VPE method, an InP buried layer 6 is grown, and hence a quantum thin line two-dimensionally quantized 300Angstrom in thickness and 200Angstrom in width is obtained. In order to form a quantum thin line 500Angstrom or less in width, ultraviolet ray whose wave length is at least 2000Angstrom or less may be used. |
