PATTERN FORMING METHOD

摘要

PURPOSE:To obtain fine resist patterns of good shapes by treating a resin contg. a 4-naphthoquinone diazide sulfonate compd. by an aq. alkaline soln., exposing the resist by (i) rays and developing the same. CONSTITUTION:The resist contg. the 4-naphthoquinone diazide sulfonate compd. is subjected to the aq. alkaline soln. treatment and then to exposing and developing, by which the patterns are formed. The 4-naphthoquinone diazide sulfonate compd. having the sensitivity in the exposing region of the (i) ray (365nm) and the pattern insolubilization effect of the resist in the mask edge part by the alkaline treatment act powerfully on each other so that the patterns having the high aspect ratio are formed. The resist patterns are formed with the good shape and the high accuracy in this way in the photolithography stage and the yield is improved.