| 发明名称 |
A method of operating a MOS-structure and MOS-structure therefor. |
| 摘要 |
<p>A SOI-nMOS-structure is cooled such that a charge is maintained in a cavity (5) of such structure for a long period of time. Applications comprise memory element.</p> |
| 申请公布号 |
EP0362961(A1) |
申请公布日期 |
1990.04.11 |
| 申请号 |
EP19890202497 |
申请日期 |
1989.10.03 |
| 申请人 |
IMEC INTER UNI MICRO ELECTR |
发明人 |
TACK, MARNIX ROGER ANNA |
| 分类号 |
H01L27/10;H01L27/12;H01L29/66;H01L29/78;H01L29/786 |
主分类号 |
H01L27/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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