发明名称 |
A method of fabricating semiconductor devices. |
摘要 |
In wafer processes, after at least one layer which constitutes a structural member of a functional semiconductor element is formed on a semiconductor wafer, an excessive deposition brittle on an edge of the semiconductor wafer is removed by grinding or etching of the wafer edge until the underlying wafer is exposed. The removal of the deposition on the wafer edge reduces dust generation caused from crack and peel-off of the excessive deposition on the wafer edge, even if the wafer edge contacts a jig, etc.. Thus the reduction in dust generation improves production yields of highly integrated semiconductor devices.
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申请公布号 |
EP0362838(A2) |
申请公布日期 |
1990.04.11 |
申请号 |
EP19890118462 |
申请日期 |
1989.10.05 |
申请人 |
FUJITSU LIMITED |
发明人 |
IMAOKA, KAZUNORI;FIJISAWA, YOICHI |
分类号 |
B24B9/06;H01L21/304;H01L21/306 |
主分类号 |
B24B9/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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