| 摘要 |
A method for cleaning reactors for the gas-phase processing of workpieces, particularly in the field of semiconductor technology and more particularly in the field of coating semiconductor substrates by means of chemical deposition processes, with less effort entails providing the reactor with a gas permeable inner wall within the usual gas impermeable outer wall, the inner wall surrounding a chamber for coating a workpiece by means of a chemical deposition process, plenums being formed between the inner and outer walls, and further with conduit means communicating between the exterior of the reactor and the plenums and conduit means communicating between the exterior of the reactor and the inner chamber, and effecting a cleaning cycle in which an etching gas is conducted through the inner chamber by being introduced into the reactor through one of the aforementioned conduit means and withdrawn from the reactor through another of the aforementioned conduit means. |
