| 摘要 |
PURPOSE:To avoid the variation in the composition ratio of a gate insulating film and a breakdown by forming a gate electrode made of the first metal layer at the center of an insulating substrate, covering the entire surface which includes the electrode with a gate insulating film, forming the second metal layer made of amorphous Si layer on the insulating film, while corresponding to the gate electrode, and mounting source and drain electrodes on the second layer. CONSTITUTION:The first metal layer 2 to become a gate electrode is formed on an insulating substrate 1, a gate insulating film 3 is covered on the entire surface which includes the first layer, and the second metal layer 3 which is formed of amorphous Si is formed while heating the substrate 1 to the vicinity of the softening point. At this time, H2 is not almost included in the lower layer 4a of the layer 4, but a large quantity of H2 is contained in the layer 4b of the upper layer, both layers are accumulated by sputtering deposition or glow discharge, and the sizes are increased larger than the layer 2. Thereafter, source and drain electrodes 5, 6 are formed while extending on the film 3 at the peripheral edge of the layer 4b. |
