发明名称 |
Dynamic random access memory device and operating method therefor |
摘要 |
In a DRAM device in accordance with the present invention, when a memory cell is selected for reading or writing data, at least one of the bit lines adjacent to the bit lines related with the selected memory cell is not selected simultaneously. Consequently, loss in a sense margin due to capacitance coupling between adjacent bit lines can be reduced.
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申请公布号 |
US4916666(A) |
申请公布日期 |
1990.04.10 |
申请号 |
US19880261021 |
申请日期 |
1988.10.20 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
FUKUHAMA, RYOUJI;MIYATAKE, HIDESHI |
分类号 |
G11C11/409;G11C11/401;G11C11/4091;G11C11/4097 |
主分类号 |
G11C11/409 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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